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| SHINDENGEN Schottky Rectifiers (SBD) Dual DF10SC9 90V 10A FEATURES *oe SMT OUTLINE DIMENSIONS Case : STO-220 Unit : mm *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe High current capacity with Small Package APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 90 V Repetitive Peak Surge Reverse VRRSM Voltageulse width 0.5ms, duty 1/40 P 100 V Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=131*Z IO 10 A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125*Z 150 A Repetitive Peak Surge Reverse PRRSM Power ulse width 10Es, Rating of per diode, Tj=25*Z 330 P W *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF I =5A, F Pulse measurement, Rating of per diodeMax.0.75 V IR V =V , Pulse measurement, Rating of per diode Max.3 mA Reverse Current R RM Junction Capacitance =10V, Rating of per diode Cj f=1MHz, R V Typ.185 pF Thermal Resistance AEjc junction to case Max.1.2 *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DF10SC9 Forward Voltage 10 Forward Current IF [A] 1 Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] DF10SC9 Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 1 10 100 Reverse Voltage VR [V] DF10SC9 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Tc=125C [TYP] Reverse Current IR [mA] 10 Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 20 40 60 80 100 Reverse Voltage VR [V] DF10SC9 60 Reverse Power Dissipation Reverse Power Dissipation PR [W] 50 DC D=0.05 0.1 0.2 40 0.3 30 0.5 20 SIN 0.8 10 0 0 20 40 60 80 100 120 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T DF10SC9 16 14 Forward Power Dissipation Forward Power Dissipation PF [W] 12 10 0.2 8 6 4 2 0 0.05 0.1 SIN 0.5 D=0.8 0.3 DC 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150C 0 tp D=tp /T T IO DF10SC9 20 Derating Curve Average Rectified Forward Current IO [A] DC 15 D=0.8 10 0.5 SIN 0.3 0.2 5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 45V 0 0 IO VR tp D=tp /T T DF10SC9 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=125C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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